High-quality langasite films grown by liquid phase epitaxy

被引：17

作者：

Klemenz, C ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, Inst Micro & Optoelect, Swiss Fed Inst Technol, CH-1015 Lausanne, Switzerland

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷

关键词：

etching; surface structure; liquid phase epitaxy; oxides; rare earth compounds; piezoelectric materials;

D O I：

10.1016/S0022-0248(01)02012-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Single-crystal line La3Ga5SiO14 (LGS) films could be grown by liquid phase epitaxy (LPE) for the first time. These films were obtained on X- and Y-oriented LGS substrates (homoepitaxy) from a PbO-based flux, and were characterized by Nomarski microscopy, AFM, SEM/EDX and XRD. Best results were obtained for Y-oriented films, with macrosteps propagating over macrosopic dimensions (> 1 x 1 cm(2)). Very flat areas with height variations within 1.4 nm over 8 pm lateral distance were measured by AFM. These films have a thickness of a few micrometer, Lire crack-free due to perfect lattice match, and no solvent inclusions or secondary phases were found. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：714 / 719

页数：6

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