Chemical analysis of pulsed laser deposited a-CNx films by comparative infrared and X-ray photoelectron spectroscopies

被引:62
作者
Szörényi, T
Fuchs, C
Fogarassy, E
Hommet, J
Le Normand, F
机构
[1] PHASE, CNRS, F-67037 Strasbourg 2, France
[2] IPCMS, F-67037 Strasbourg 2, France
[3] Res Grp Laser Phys, H-6720 Szeged, Hungary
关键词
carbon nitride; infrared (IR) absorption spectroscopy; pulsed laser deposition; X-ray photoelectron spectroscopy (XPS);
D O I
10.1016/S0257-8972(99)00580-0
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Amorphous carbon nitride films are deposited at room temperature on silicon substrates by ArF excimer laser (193 nm) ablation of a graphite target in nitrogen atmosphere. By tuning the process parameters, fine control of the carbon-carbon and carbon-nitrogen bond configuration is achieved in a broad range as followed by X-ray photoelectron spectroscopy (XPS) and infrared (IR) absorption spectroscopy. Based on the comparative and quantitative analysis of changes in measured IR versus XPS spectra as a function of reactive gas pressure, laser fluence and target-to-substrate distance, and on a critical review of the existing interpretation of IR data, an assignment of the components of the broad band extending from 900 to 1900 cm(-1) in the IR spectra to specific carbon-carbon and carbon-nitrogen bond configurations is proposed. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:308 / 312
页数:5
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