Structural, optical, and electrical properties of bulk AlN crystals grown by PVT

被引：8

作者：

Bickermann, M

Epelbaum, BM

Winnacker, A

机构：

[1] Univ Erlangen Nurnberg, Dept Mat Sci 6, D-91058 Erlangen, Germany

[2] SiCrystal AG, D-91052 Erlangen, Germany

来源：

SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 | 2004年 / 457-460卷

关键词：

AlN single crystal; structural quality; Al precipitation; optical properties; resistivity;

D O I：

10.4028/www.scientific.net/MSF.457-460.1541

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, data on structural, optical, and electrical properties of bulk AlN are presented. It is shown that the polycrystalline AlN boules grown by PVT are of high purity. Single-crystalline areas exhibit high structural quality, but void formation occurs dependent on crystal orientation. Aluminum precipitation and nitrogen vacancy formation are observed in boules grown at high temperature. Results from optical absorption, FT-IR micro-spectroscopy and resistivity measurements are valuable for further optimization of bulk crystal growth of AlN.

引用

页码：1541 / 1544

页数：4

共 9 条

[1] Infrared reflectance analysis of GaN epitaxial layers grown on sapphire and silicon substrates [J].