High-field step-stress and long term stability of PHEMTs with different gate and recess lengths

被引：3

作者：

Cova, P ^{[1
]}

Menozzi, R

Dammann, M

Feltgen, T

Jantz, W

机构：

[1] Univ Parma, Dipartimento Ingn Informazione, Parco Area Sci 181-A, I-43100 Parma, Italy

[2] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany

来源：

MICROELECTRONICS RELIABILITY | 2002年 / 42卷 / 9-11期

关键词：

D O I：

10.1016/S0026-2714(02)00195-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The reliability of high power AlGaAs/InGaAs/GaAs PHEMTs has been investigated. The influences of high temperature and of elevated drain voltage have been studied separately, using long term operation at elevated temperature and a 23-hour drain-voltage step-stress at room temperature. Results pertaining to different combinations of gate length and gate-drain ledge are reported and discussed, indicating safe operation values and showing that a wider gate-drain recess increases the device reliability. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：1587 / 1592

页数：6

共 13 条

[1] Hot electron degradation of the DC and RF characteristics of AlGaAs/InGaAs/GaAs PHEMT's [J].

Borgarino, M ;

Menozzi, R ;

Baeyens, Y ;

Cova, P ;

Fantini, F .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (02) :366-372

[2]

CANALI C, 1995, 1995 IEEE INTERNATIONAL RELIABILITY PHYSICS PROCEEDINGS, 33RD ANNUAL, P205, DOI 10.1109/RELPHY.1995.513676

[3]

CHERTOUK M, 2002, GAAS FOUNDRY FAB MAN, P138

[4] Evolution of DC and RF degradation induced by high-temperature accelerated lifetest of pseudomorphic GaAs and InGaAs/InAlAs/InP HEMT MMICs [J].

Chou, YC ;

Leung, D ;

Lai, R ;

Grundbacher, R ;

Eng, D ;

Scarpulla, J ;

Barsky, M ;

Liu, PH ;

Biedenbender, M ;

Oki, A ;

Streit, D .

40TH ANNUAL PROCEEDINGS: INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2002, :241-247

[5] A study of hot-electron degradation effects in pseudomorphic HEMTs [J].

Cova, P ;

Menozzi, R ;

Fantini, F ;

Pavesi, M ;

Meneghesso, G .

MICROELECTRONICS RELIABILITY, 1997, 37 (07) :1131-1135

[6] Electric-field-related reliability of AlGaAs/GaAs power HFETs: Bias dependence and correlation with breakdown [J].

Dieci, D ;

Sozzi, G ;

Menozzi, R ;

Tediosi, E ;

Lanzieri, C ;

Canali, C .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2001, 48 (09) :1929-1937

[7]

Marsetz W., 1998, 28th European Microwave Conference Proceedings, P439, DOI 10.1109/EUMA.1998.338193

[8] GaAsPHEMT with 1.6W/mm output power density [J].

Marsetz, W ;

Hülsmann, A ;

Köhler, K ;

Demmler, M ;

Schlechtweg, M .

ELECTRONICS LETTERS, 1999, 35 (09) :748-749

[9] Trapped charge modulation: A new cause of instability in AlGaAs/InGaAs pseudomorphic HEMT's [J].

Meneghesso, G ;

Canali, C ;

Cova, P ;

DeBortoli, E ;

Zanoni, E .

IEEE ELECTRON DEVICE LETTERS, 1996, 17 (05) :232-234

[10] DC and pulsed measurements of on-state breakdown voltage in GaAs MESFETs and InP-based HEMTs [J].

Meneghesso, G ;

Massari, G ;

Buttari, D ;

Bortoletto, A ;

Maretto, M ;

Zanoni, E .

MICROELECTRONICS RELIABILITY, 1999, 39 (12) :1759-1763

← 1 2 →