A humidity-sensing model for metal-insulator-semiconductor capacitors with porous ceramic film

A new physical model for a humidity-sensitive metal-insulator-semiconductor (MIS) capacitor with porous thin film is proposed. The model is used to determine water adsorption isotherm and calculate pore-size distribution of the film. The relative-humidity dependences of the capacitance and resistance of the film were measured. The effects of frequency on the dielectric constant of the film and the current of the MIS structure under various relative humidities were investigated. (C) 2000 American Institute of Physics. [S0021-8979(00)06212-5].