Synthesis and photoluminescence of Zn2SnO4 nanowires

被引:52
作者
Hu, Q. R. [1 ]
Jiang, P. [1 ]
Xu, H. [1 ]
Zhang, Y. [1 ]
Wang, S. L. [1 ]
Jia, X. [1 ]
Tang, W. H. [1 ]
机构
[1] Zhejiang Sci Tech Univ, Ctr Optoelect Mat & Devices, Dept Phys, Hangzhou 310018, Zhejiang, Peoples R China
基金
中国国家自然科学基金;
关键词
Semiconductors; Nanostructured materials; Gas-solid reactions; Optical property; STANNATE THIN-FILMS; HYDROTHERMAL SYNTHESIS; TIN OXIDE; PHOTOCATALYTIC PROPERTIES; OPTICAL-PROPERTIES; NANOBELTS;
D O I
10.1016/j.jallcom.2009.05.057
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
High-density single-crystalline Zn2SnO4 nanowires have been successfully synthesized via a simple chemical vapor deposition method by heating a mixture of metal Zn and Sn powders. These straight nanowires with an average diameter of 100-50 nm exhibit rather smooth surface, which is different from the nanowires fabricated by other experiment methods. The growth mechanism of these nanowires is a typical vapor-liquid-solid (VLS) process. In addition, photoluminescence (PL) spectrum of the nanowires was measured, showing strong orange and red emission bands centered at 606.8 and 630.1 nm, respectively, which is rarely observed before. It is maybe ascribed to new luminescence centres caused by the bulk defects related to inverse spinels structure of the Zn2SnO4 nanowires. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:25 / 27
页数:3
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