High-performance flexible zinc tin oxide field-effect transistors

Flexible transistors were fabricated by sputter deposition of zinc tin oxide (ZTO) onto plasma-enhanced chemical vapor deposition gate dielectrics formed on flexible polyimide substrates with a blanket aluminum gate electrode. The flexible transistors exhibited high on-currents of 1 mA, on/off ratios of 10(6), subthreshold voltage slopes of 1.6 V/decade, turn-on voltages of -17 V, and mobilities of 14 cm(2) V-1 s(-1). Capacitance measurements indicate that the threshold voltage and subthreshold slope are primarily influenced by residual doping in the ZTO rather than by defects at the semiconductor/dielectric interface, and are useful for assessing contact resistance. (C) 2005 American Institute of Physics.