The transport gap of organic semiconductors studied using the combination of direct and inverse photoemission

被引：196

作者：

Zahn, Dietrich R. T. ^{[1
]}

Gavrila, Gianina N. ^{[1
]}

Gorgoi, Mihaela ^{[1
]}

机构：

[1] Tech Univ Chemnitz, Halbleiterphys, Inst Phys, D-09107 Chemnitz, Germany

来源：

CHEMICAL PHYSICS | 2006年 / 325卷 / 01期

关键词：

organic semiconductors; phthalocyanine; perylene derivatives; photoemission; inverse photoemission; transport gap;

D O I：

10.1016/j.chemphys.2006.02.003

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The combination of valence band photoemission and inverse photoemission spectroscopy is applied to study the densities of occupied and unoccupied states of perylene derivative and phthalocyanine organic layers on inorganic semiconductors. The ionisation energies and electron affinities are determined and it is proposed that the transport gap of the materials can be evaluated from the distance of the HOMO and LUMO edges. The resulting values for the transport gap which are somewhat smaller than other published data are in good agreement with e.g. electrical measurements. The experimental spectra are compared with simulated ones obtained by density functional theory calculations. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：99 / 112

页数：14