Optical spectra of nitride quantum dots: Quantum confinement and electron-hole coupling

被引：17

作者：

Hohenester, U ^{[1
]}

Di Felice, R

Molinari, E

Rossi, F

机构：

[1] Univ Modena, Ist Nazl Fis Mat, Dipartimento Fis, I-41100 Modena, Italy

[2] Politecn Torino, Dipartimento Fis, I-10129 Turin, Italy

[3] INFM, I-10129 Turin, Italy

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 22期

关键词：

D O I：

10.1063/1.125292

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We calculate the optical properties of nitride-based quantum dots by taking into account quantum confinement as well as electron-hole interaction. We analyze model structures simulating In(x)Ga(1-x)N dots in In(y)Ga(1-y)N layers with different alloy compositions. We discuss the trends with the dot size and show that quantum confined excitations exist for a broad range of sizes down to the smallest observed dots. Our results allow us to identify the strong role of Coulomb correlations in the optical spectra and to predict a strong influence of photoexcitation power on selection rules in polarized samples. The signature of quantum confinement can be utilized for a critical interpretation of measured optical spectra. (C) 1999 American Institute of Physics. [S0003-6951(99)03448-8].

引用

页码：3449 / 3451

页数：3

共 22 条

[1] Polarization-based calculation of the dielectric tensor of polar crystals [J].

Bernardini, F ;

Fiorentini, V ;

Vanderbilt, D .

PHYSICAL REVIEW LETTERS, 1997, 79 (20) :3958-3961

[2] Spontaneous polarization and piezoelectric constants of III-V nitrides [J].

Bernardini, F ;

Fiorentini, V ;

Vanderbilt, D .

PHYSICAL REVIEW B, 1997, 56 (16) :10024-10027

[3] Luminescences from localized states in InGaN epilayers [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1997, 70 (21) :2822-2824

[4]

Haug H., 2009, QUANTUM THEORY OPTIC, V5th

[5] Few-particle effects in the optical spectra of semiconductor quantum dots [J].

Hohenester, U ;

Rossi, F ;

Molinari, E .

SOLID STATE COMMUNICATIONS, 1999, 111 (04) :187-192

[6]

Majewski JA, 1996, MRS INTERNET J N S R, V1, pU247

[7] Phase separation in InGaN/GaN multiple quantum wells [J].

McCluskey, MD ;

Romano, LT ;

Krusor, BS ;

Bour, DP ;

Johnson, NM ;

Brennan, S .

APPLIED PHYSICS LETTERS, 1998, 72 (14) :1730-1732

[8] Influence of surface stress on the equilibrium shape of strained quantum dots [J].

Moll, N ;

Scheffler, M ;

Pehlke, E .

PHYSICAL REVIEW B, 1998, 58 (08) :4566-4571

[9]

Nardelli MB, 1997, APPL PHYS LETT, V71, P3135, DOI 10.1063/1.120269

[10] Strain effects on the interface properties of nitride semiconductors [J].

Nardelli, MB ;

Rapcewicz, K ;

Bernholc, J .

PHYSICAL REVIEW B, 1997, 55 (12) :R7323-R7326

← 1 2 3 →