Initial stages of Ge growth on Si(100): ad-atoms, ad-dimers, and ad-trimers

被引：8

作者：

Dalpian, GM ^{[1
]}

Janotti, A ^{[1
]}

Fazzio, A ^{[1
]}

da Silva, AJR ^{[1
]}

机构：

[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil

来源：

PHYSICA B-CONDENSED MATTER | 1999年 / 273-4卷

基金：

巴西圣保罗研究基金会;

关键词：

Ge on Si(100); semiconductor growth; ab initio calculations;

D O I：

10.1016/S0921-4526(99)00580-3

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We study, using ab initio calculations, small structures that are present at the early stages of growth of Ge on the Si(100) surface. Ad-atoms, ad-dimers, and ad-trimers are investigated. We consider different configurations of the adsorbed structures, and present results for their relaxed geometries and relative energies. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：589 / 592

页数：4

共 22 条

[1] PSEUDOPOTENTIALS THAT WORK - FROM H TO PU [J].

BACHELET, GB ;

HAMANN, DR ;

SCHLUTER, M .

PHYSICAL REVIEW B, 1982, 26 (08) :4199-4228

[2] SI BINDING AND NUCLEATION ON SI(100) [J].

BEDROSSIAN, PJ .

PHYSICAL REVIEW LETTERS, 1995, 74 (18) :3648-3651

[3] Density-functional theory calculations for poly-atomic systems: electronic structure, static and elastic properties and ab initio molecular dynamics [J].

Bockstedte, M ;

Kley, A ;

Neugebauer, J ;

Scheffler, M .

COMPUTER PHYSICS COMMUNICATIONS, 1997, 107 (1-3) :187-222

[4] Diffusion of the silicon dimer on Si(001): New possibilities at 450 K [J].

Borovsky, B ;

Krueger, M ;

Ganz, E .

PHYSICAL REVIEW LETTERS, 1997, 78 (22) :4229-4232

[5] Dynamics and nucleation of Si Ad-dimers on the Si(100) surface [J].

Brocks, G ;

Kelly, PJ .

PHYSICAL REVIEW LETTERS, 1996, 76 (13) :2362-2365

[6] BINDING AND DIFFUSION OF A SI ADATOM ON THE SI(100) SURFACE [J].

BROCKS, G ;

KELLY, PJ ;

CAR, R .

PHYSICAL REVIEW LETTERS, 1991, 66 (13) :1729-1732

[7] STM STUDY OF GE OVERLAYERS ON SI(001) [J].

IWAWAKI, F ;

TOMITORI, M ;

NISHIKAWA, O .

SURFACE SCIENCE, 1992, 266 (1-3) :285-288

[8] Kinetically self-limiting growth of Ge islands on Si(001) [J].

Kästner, M ;

Voigtländer, B .

PHYSICAL REVIEW LETTERS, 1999, 82 (13) :2745-2748

[9] EFFICACIOUS FORM FOR MODEL PSEUDOPOTENTIALS [J].

KLEINMAN, L ;

BYLANDER, DM .

PHYSICAL REVIEW LETTERS, 1982, 48 (20) :1425-1428

[10] Scanning tunneling microscopy of semiconductor surfaces [J].

Kubby, JA ;

Boland, JJ .

SURFACE SCIENCE REPORTS, 1996, 26 (3-6) :61-204

← 1 2 3 →