Advanced CMOS transistors with a novel HfSiON gate dielectric

We report for the first time on short channel transistors fabricated using HfSiON, a new high-k gate dielectric material. HfSiON has superior electrical characteristics such as low leakage current relative to SiO2, low interfacial trap density, electron and hole carrier mobilities similar to80% of the universal curve at E-eff > 0.8MV/cm and scalability to equivalent oxide thicknesses of less than 10 Angstrom. This material is also thermally stable up to 1100 degreesC in contact with poly Si, and exhibits boron blocking significantly better than SiO2 and SiON. The results indicate that this material is a promising high-k gate dielectric with good transistor characteristics.