Vapor growth and characterization of Cr-doped CdS0.8Se0.2 single crystals

被引：4

作者：

Roy, UN ^{[1
]}

Babalola, OS ^{[1
]}

Cui, Y ^{[1
]}

Groza, M ^{[1
]}

Mounts, T ^{[1
]}

Zavalin, A ^{[1
]}

Morgan, S ^{[1
]}

Burger, A ^{[1
]}

机构：

[1] Fisk Univ, Ctr Photon Mat & Devices, Dept Phys, Nashville, TN 37208 USA

来源：

JOURNAL OF CRYSTAL GROWTH | 2004年 / 265卷 / 3-4期

基金：

美国国家科学基金会;

关键词：

doping; physical vapor transport; semiconducting H-VI materials; mid-IR laser;

D O I：

10.1016/j.jcrysgro.2004.01.065

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

CdS0.8Se0.2 crystals doped with Cr2+ at a level of similar to 1.2 x 10(18) ions/cm(3) were grown by the self-seeded physical vapor transport technique in vertical configuration. The ternary compound was synthesized from a stoichiometric mixture of vacuum sublimed CdS and CdSe. The growth temperature was 950degreesC and it produced a single crystal free of cracks and precipitates. The absorption peak maximum for Cr2+ ion was found to be at 1.85 mum and its intensity was used to determine the dopant concentration and its axial distribution. The axial and radial uniformity of the S/Se ratio were determined by energy dispersive X-ray spectroscopy and found to be uniform throughout the ingot and practically identical to the composition of the source. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：453 / 458

页数：6

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