Micro-Raman thermometry of thermal flexure actuators

被引:35
作者
Serrano, J. R. [1 ]
Phinney, L. M. [1 ]
Kearney, S. P. [1 ]
机构
[1] Sandia Natl Labs, Engn Sci Ctr, Albuquerque, NM 87185 USA
关键词
D O I
10.1088/0960-1317/16/7/004
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Micro-Raman spectroscopy has proven to be a valuable tool for obtaining temperature measurements in active semiconductor and MEMS devices. By using the temperature-calibrated response of the polysilicon Raman signature, we have obtained spatially resolved temperature measurements of U-shaped electro-thermal actuators. Both the peak position and the line width of the characteristic Raman peak have been used as temperature metrics. The measured thermal profiles are further compared to numerical models of the electro-thermal response of the devices as designed and fabricated. The obtained thermal profiles are in qualitative agreement with published modeled thermal profiles of similar devices and are within 15 degrees C of our modeled profiles. These measurements represent the first reported experimental temperature profile measurements for flexure type actuators and can be used to validate the existing models. Moreover, the comparison of line width and position-based temperatures are in good agreement, differing slightly over the flexure regions of the device.
引用
收藏
页码:1128 / 1134
页数:7
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