Interfacial reactions of the Co/Si1-xGex system

被引:11
作者
Luo, JS
Lin, WT
Chang, CY
Tsai, WC
Wang, SJ
机构
[1] NATL CHENG KUNG UNIV,DEPT MAT SCI & ENGN,TAINAN 70101,TAIWAN
[2] NATL CHIAO TUNG UNIV,DEPT ELECT ENGN,HSINCHU 300,TAIWAN
[3] NATL CHENG KUNG UNIV,DEPT ELECT ENGN,TAINAN 70101,TAIWAN
关键词
interfacial reactions; Co/Si1-xGex systems;
D O I
10.1016/S0254-0584(97)80108-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thermal reactions of Co(200 Angstrom)/Si0.76Ge0.24(1500 Angstrom)/Si and Co(200 Angstrom)/Si0.54Ge0.46(1000 Angstrom)/Si systems in a vacuum of 1-2 X 10(-6) Ton. were studied. At temperatures above 200 degrees C Ge segregation appeared even though no silicides and/or germanosilicides were formed. At a temperature of 225-550 degrees C Co(Si1-yGey) was formed, in which the Ge concentration was deficient, The formation temperatures of CoSi2 in the Co/Si1-xGex systems, where x = 0.24 and 0.46, were above 575 degrees C, being relatively higher than that in the Co/Si system. At temperatures above 500 degrees C the island structure, Ge segregation to the surface of the exposed Si1-xGex films, and the penetration of reacted layer into the Si substrate occurred, At temperatures above 700 degrees C a SiC layer was grown on the film surface. For the Si0.54Ge0.46 films the penetration of the reacted layer into the Si substrate occurred even at 350 degrees C owing to the wave structure of the as-grown Si0.54Ge0.46 films. A Si layer interposed between Co and Si0.76Ge0.24 films is an effective scheme to grow a continuous CoSi, contact at 550-600 degrees C without inducing Ge segregation and hence the strain relaxation in the Si0.76Ge0.24 films.
引用
收藏
页码:140 / 144
页数:5
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