THERMAL-STABILITY OF PTSI CONTACT TO GEXSI1-X

被引:9
作者
HONG, QZ
ZHU, JG
CARTER, CB
MAYER, JW
机构
关键词
D O I
10.1063/1.104472
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thermal stability of PtSi contact to epitaxial Ge0.5Si0.5/(100)Si has been investigated. The PtSi layer remained structurally and morphologically intact on the epitaxial Ge-Si alloy at temperatures around 650-degrees-C. When annealed at higher temperatures, PtSi penetrated locally into the alloy, although no chemical reaction was observed. The observed stability of PtSi is explained on the basis of a ternary Pt-Ge-Si equilibrium phase diagram. Other choices of contact compounds on Ge-Si alloys are also discussed.
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页码:905 / 907
页数:3
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