Influences of biaxial strains on the vibrational and exciton energies in ZnO

被引：78

作者：

Gruber, T ^{[1
]}

Prinz, GM ^{[1
]}

Kirchner, C ^{[1
]}

Kling, R ^{[1
]}

Reuss, F ^{[1
]}

Limmer, W ^{[1
]}

Waag, A ^{[1
]}

机构：

[1] Univ Ulm, Abt Halbleiterphys, D-89069 Ulm, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 01期

关键词：

D O I：

10.1063/1.1755433

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the structural, optical, and vibrational properties of strained heteroepitaxial ZnO layers by high resolution x-ray diffraction, reflectivity, and Raman measurements. The ZnO layers were grown by metalorganic vapor phase epitaxy on sapphire substrates under varying growth conditions. A Poisson number of mu=0.303 and phonon deformation-potential parameters of a=-690 cm(-1), b=-940 cm(-1) for the high-energy E-2 optical phonon mode have been determined. The shift of the excitonic resonances due to the strain in the layers agrees well with the experimentally determined Poisson ratio using the deformation-potentials D-1-D-4 determined by Wrzesinski and Frohlich [Phys. Rev. B 56, 13087 (1997)]. (C) 2004 American Institute of Physics.

引用

页码：289 / 293

页数：5

共 27 条

[1] Optically pumped lasing of ZnO at room temperature [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232

[2] PIEZOSPECTROSCOPIC STUDY OF RAMAN-SPECTRUM OF CADMIUM-SULFIDE [J].

BRIGGS, RJ ;

RAMDAS, AK .

PHYSICAL REVIEW B, 1976, 13 (12) :5518-5529

[3] Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers [J].

Chichibu, S ;

Shikanai, A ;

Azuhata, T ;

Sota, T ;

Kuramata, A ;

Horino, K ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 68 (26) :3766-3768

[4] Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H-SiC [J].

Davydov, VY ;

Averkiev, NS ;

Goncharuk, IN ;

Nelson, DK ;

Nikitina, IP ;

Polkovnikov, AS ;

Smirnov, AN ;

Jacobsen, MA ;

Semchinova, OK .

JOURNAL OF APPLIED PHYSICS, 1997, 82 (10) :5097-5102

[5] High-pressure Raman spectroscopy study of wurtzite ZnO [J].

Decremps, F ;

Pellicer-Porres, J ;

Saitta, AM ;

Chervin, JC ;

Polian, A .

PHYSICAL REVIEW B, 2002, 65 (09) :921011-921014

[6] Strain-fields effects and reversal of the nature of the fundamental valence band of ZnO epilayers [J].

Gil, B ;

Lusson, A ;

Sallet, V ;

Said-Hassani, SA ;

Triboulet, R ;

Bigenwald, P .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2001, 40 (10B) :L1089-L1092

[7] Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry [J].

Gil, B ;

Briot, O ;

Aulombard, RL .

PHYSICAL REVIEW B, 1995, 52 (24) :17028-17031

[8]

Gruber T, 2002, PHYS STATUS SOLIDI A, V192, P166, DOI 10.1002/1521-396X(200207)192:1<166::AID-PSSA166>3.0.CO

[9]

2-G

[10] THERMAL EXPANSION OF SILICON AND ZINE OXIDE (2) [J].

IBACH, H .

PHYSICA STATUS SOLIDI, 1969, 33 (01) :257-&

← 1 2 3 →