A field effect transistor based on the Mott transition in a molecular layer

被引：80

作者：

Zhou, C ^{[1
]}

Newns, DM ^{[1
]}

Misewich, JA ^{[1
]}

Pattnaik, PC ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 05期

关键词：

D O I：

10.1063/1.118285

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Here we propose and analyze the behavior of a field effect transistor (FET)-like switching device, the Mott transition field effect transistor, operating on a novel principle, the Mott metal-insulator transition. The device has FET-like characteristics with a low ''ON'' impedance and high ''OFF'' impedance. Function of the device is feasible down to nanoscale dimensions. Implementation with a class of organic charge transfer complexes is proposed. (C) 1997 American Institute of Physics.

引用

页码：598 / 600

页数：3

共 18 条

[1]

[Anonymous], 1990, METAL INSULATOR TRAN

[2]

BEDELL KS, 1990, HIGH TEMPERATURE SUP

[3] ORGANIC HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS [J].