Subwavelength antireflection gratings for light emitting diodes and photodiodes fabricated by fast atom beam etching

被引:37
作者
Ishimori, M [1 ]
Kanamori, Y [1 ]
Sasaki, M [1 ]
Hane, K [1 ]
机构
[1] Tohoku Univ, Dept Mechatron & Precis Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2002年 / 41卷 / 6B期
关键词
subwavelengh grating; antireflection; fast atom beam; light-emitting diode; photodiode;
D O I
10.1143/JJAP.41.4346
中图分类号
O59 [应用物理学];
学科分类号
摘要
A two-dimensional antireflection subwavelangth-structured (SWS) surface is fabricated oil GaAlAs light-emitting diodes (LEDs) and photodiodes. The SWS is patterned by electron beam lithographs and etched by fast atom beams of SF, and Cl, gases. The SWS grating has a conical profile. 200 nm period and 270 nm groove depth, The emission intensity from this LED is 30% larger than that from the LED without a SWS grating at the peak emission wavelength. When this de-ice is used as a photodiode, the reflection reduced by the SWS surface increases both the short-circuit current and open-circuit Voltage, The SWS surface is useful as an antireflection structure improving the efficiency of the light emission of LEDs and the light detection of photodiodes.
引用
收藏
页码:4346 / 4349
页数:4
相关论文
共 20 条
[1]   Light extraction from optically pumped light-emitting diode by thin-slab photonic crystals [J].
Boroditsky, M ;
Krauss, TF ;
Coccioli, R ;
Vrijen, R ;
Bhat, R ;
Yablonovitch, E .
APPLIED PHYSICS LETTERS, 1999, 75 (08) :1036-1038
[2]   Recycling of guided mode light emission in planar microcavity light emitting diodes [J].
DeNeve, H ;
Blondelle, J ;
VanDaele, P ;
Demeester, P ;
Baets, R ;
Borghs, G .
APPLIED PHYSICS LETTERS, 1997, 70 (07) :799-801
[3]   OPTICAL-ELEMENTS WITH ULTRAHIGH SPATIAL-FREQUENCY SURFACE CORRUGATIONS [J].
ENGER, RC ;
CASE, SK .
APPLIED OPTICS, 1983, 22 (20) :3220-3228
[4]   Enhanced coupling to vertical radiation using a two-dimensional photonic crystal in a semiconductor light-emitting diode [J].
Erchak, AA ;
Ripin, DJ ;
Fan, S ;
Rakich, P ;
Joannopoulos, JD ;
Ippen, EP ;
Petrich, GS ;
Kolodziejski, LA .
APPLIED PHYSICS LETTERS, 2001, 78 (05) :563-565
[5]   Optimization of the emission characteristics of light emitting diodes by surface plasmons and surface waveguide modes [J].
Gianordoli, S ;
Hainberger, R ;
Köck, A ;
Finger, N ;
Gornik, E ;
Hanke, C ;
Korte, L .
APPLIED PHYSICS LETTERS, 2000, 77 (15) :2295-2297
[6]   CHARACTERIZATION OF 23-PERCENT EFFICIENT SILICON SOLAR-CELLS [J].
GREEN, MA ;
BLAKERS, AW ;
ZHAO, JH ;
MILNE, AM ;
WANG, AH ;
DAI, XM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (02) :331-336
[7]   ELECTROMAGNETIC SCATTERING OF 2-DIMENSIONAL SURFACE-RELIEF DIELECTRIC GRATINGS [J].
HAN, ST ;
TSAO, YL ;
WALSER, RM ;
BECKER, MF .
APPLIED OPTICS, 1992, 31 (13) :2343-2352
[8]   ENHANCED SPECTRAL POWER-DENSITY AND REDUCED LINEWIDTH AT 1.3-MU-M IN AN INGAASP QUANTUM-WELL RESONANT-CAVITY LIGHT-EMITTING DIODE [J].
HUNT, NEJ ;
SCHUBERT, EF ;
LOGAN, RA ;
ZYDZIK, GJ .
APPLIED PHYSICS LETTERS, 1992, 61 (19) :2287-2289
[9]   Broadband antireflection gratings for glass substrates fabricated by fast atom beam etching [J].
Kanamori, Y ;
Kikuta, H ;
Hane, K .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (7B) :L735-L737
[10]  
KOCK A, 1990, APPL PHYS LETT, V57, P2327, DOI 10.1063/1.103883