Two-terminal edge-coupled InP/InGaAs heterojunction phototransistor optoelectronic mixer

被引：28

作者：

Liu, CP

Seeds, AJ

Wake, D

机构：

[1] Dept. of Electron. and Elec. Eng., University College London

[2] BT Laboratories

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1997年 / 7卷 / 03期

关键词：

heterojunction phototransistor; microwave optoelectronics; optoelectronic mixing;

D O I：

10.1109/75.556036

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the first experimental results for optoelectronic mixing using a two-terminal edge-coupled InP/InGaAs heterojunction phototransistor (HPT), The HPT optoelectronic mixer (OEM) exhibits a maximum of 7-dB conversion gain relative to a 100% quantum efficient photodetector operated at the optical modulation frequency, We give a qualitative explanation for the observed conversion gain variation with the HPT bias voltage.

引用

收藏

页码：72 / 74

页数：3

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