Effects of piezoelectric field, bias and indium fluctuations on a InGaN-GaN single quantum well system

被引：8

作者：

Oriato, D ^{[1
]}

Walker, AB ^{[1
]}

机构：

[1] Univ Bath, Dept Phys, Bath BA2 7AY, Avon, England

来源：

PHYSICA B-CONDENSED MATTER | 2002年 / 314卷 / 1-4期

关键词：

piezoelectric; nitrides; fluctuations; quantum-well;

D O I：

10.1016/S0921-4526(01)01371-0

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A drift-diffusion model and a self-consistent solution of Poisson and Schrodinger equations have been used to obtain the band profile. the energy levels and the wave functions of an InGaN quantum well. The piezoelectric field has been shown to influence the emission energy. Published experimental results match our calculations on bias dependency. However, discrepancies between the magnitude of the calculated and measured average fields in the well are found. We show that indium fluctuations affect the field inside the well and the emission energy. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：59 / 62

页数：4

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