Optical study of high-biased AlGaN/GaN high-electron-mobility transistors

被引：74

作者：

Shigekawa, N ^{[1
]}

Shiojima, K ^{[1
]}

Suemitsu, T ^{[1
]}

机构：

[1] NTT Photon Labs, Kanagawa 2430198, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 92卷 / 01期

关键词：

D O I：

10.1063/1.1481973

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Microscopic electroluminescence (EL) and photoluminescence (PL) measurements of high-biased AlGaN/GaN high-electron-mobility transistors are reported. We observed that the EL intensity reveals peaks around the edge of the channel and the electron temperature there is higher than the electron temperature at the center of the channel. These EL features were found to be consistent with the change in the junction temperature, which we locally estimated by comparing the PL data with measurements in raised ambient temperatures. (C) 2002 American Institute of Physics.

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页码：531 / 535

页数：5

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