Impact ionisation in AlGaN-GaN heterostructure field effect transistors on sapphire substrates

被引:10
作者
Dyakonova, N [1 ]
Dickens, A
Shur, MS
Gaska, R
机构
[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA
[2] APA Opt, Blaine, MN 55449 USA
关键词
D O I
10.1049/el:19981174
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The authors report on the impact ionisation in AlGaN-GaN heterostructure field effect transistors (HFETs) grown on sapphire substrates. The measured characteristic electric field of the impact ionisation is similar to 2.8-3.15 MV/cm at room temperature. This result is in good agreement with the theoretical predictions for the breakdown field in GaN and with recent results for AlGaN-GaN HFETs on 6H-SiC substrates.
引用
收藏
页码:1699 / 1700
页数:2
相关论文
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