Impact ionisation in AlGaN-GaN heterostructure field effect transistors on sapphire substrates

被引：10

作者：

Dyakonova, N ^{[1
]}

Dickens, A

Shur, MS

Gaska, R

机构：

[1] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[2] APA Opt, Blaine, MN 55449 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 17期

关键词：

D O I：

10.1049/el:19981174

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors report on the impact ionisation in AlGaN-GaN heterostructure field effect transistors (HFETs) grown on sapphire substrates. The measured characteristic electric field of the impact ionisation is similar to 2.8-3.15 MV/cm at room temperature. This result is in good agreement with the theoretical predictions for the breakdown field in GaN and with recent results for AlGaN-GaN HFETs on 6H-SiC substrates.

引用

页码：1699 / 1700

页数：2

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