Low-frequency noise in GaN/GaAlN heterojunctions

被引：40

作者：

Levinshtein, ME

Pascal, F

Contreras, S

Knap, W

Rumyantsev, SL

Gaska, R

Yang, JW

Shur, MS

机构：

[1] Univ Montpellier 2, Ctr Elect & Microoptoelect Montpellier, F-34095 Montpellier, France

[2] Univ Montpellier 2, GES, UMR CNRS 5650, F-34095 Montpellier, France

[3] AF Ioffe Phys Tech Inst, Solid State Elect Div, St Petersburg 194021, Russia

[4] APA Opt Inc, Blaine, MN 55449 USA

[5] Rensselaer Polytech Inst, Dept Elect Comp & Syst Engn, Troy, NY 12180 USA

[6] Rensselaer Polytech Inst, Ctr Integrated Elect & Elect Mfg, Troy, NY 12180 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 23期

关键词：

D O I：

10.1063/1.121538

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the results of the measurements of the low-frequency nitride/gallium aluminum nitride (GaN/GaAlN) heterojunctions grown on sapphire substrates. The noise spectra have the form of the 1/f noise with the Hooge parameter of approximately 10(-2). The effects of band-to-band and impurity illumination on the low-frequency noise show that the nature of the 1/f noise in GaN might be a result of the occupancy fluctuations of the tail states near the band edges. This mechanism of the 1/f noise is similar to that in GaAs and Si. (C) 1998 American Institute of Physics. [S0003-6951(98)03823-6].

引用

页码：3053 / 3055

页数：3

共 18 条

[1] 0.12-mu m gate III-V nitride HFET's with high contact resistances [J].