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IMPACT IONIZATION IN GAAS-MESFETS
被引:99
作者
:
HUI, K
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
HUI, K
[
1
]
HU, CM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
HU, CM
[
1
]
GEORGE, P
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
GEORGE, P
[
1
]
KO, PK
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
KO, PK
[
1
]
机构
:
[1]
UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720
来源
:
IEEE ELECTRON DEVICE LETTERS
|
1990年
/ 11卷
/ 03期
关键词
:
D O I
:
10.1109/55.46951
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
A method to measure impact ionization current in GaAs MESFET’s is presented. The impact ionization current is then used to calculate the maximum electric field in the channel and the impact ionization coefficient. Data for the electron impact ionization coefficient in ⟨110⟩ GaAs are extended beyond previous studies by five orders of magnitude. Impact ionization is taken into account in a new gate current model. © 1990 IEEE
引用
收藏
页码:113 / 115
页数:3
相关论文
共 7 条
[1]
DEPENDENCE OF MAXIMUM GATE DRAIN POTENTIAL IN GAAS-MESFETS UPON LOCALIZED SURFACE-CHARGE
BARTON, TM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEW S WALES,JOINT MICROELECTR RES CTR,KENSINGTON,NSW 2033,AUSTRALIA
UNIV NEW S WALES,JOINT MICROELECTR RES CTR,KENSINGTON,NSW 2033,AUSTRALIA
BARTON, TM
LADBROOKE, PH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEW S WALES,JOINT MICROELECTR RES CTR,KENSINGTON,NSW 2033,AUSTRALIA
UNIV NEW S WALES,JOINT MICROELECTR RES CTR,KENSINGTON,NSW 2033,AUSTRALIA
LADBROOKE, PH
[J].
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(03)
: 117
-
119
[2]
DEPENDENCE OF CHANNEL ELECTRIC-FIELD ON DEVICE SCALING
CHAN, TY
论文数:
0
引用数:
0
h-index:
0
CHAN, TY
KO, PK
论文数:
0
引用数:
0
h-index:
0
KO, PK
HU, C
论文数:
0
引用数:
0
h-index:
0
HU, C
[J].
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(10)
: 551
-
553
[3]
A SIMPLE METHOD TO CHARACTERIZE SUBSTRATE CURRENT IN MOSFETS
CHAN, TY
论文数:
0
引用数:
0
h-index:
0
CHAN, TY
KO, PK
论文数:
0
引用数:
0
h-index:
0
KO, PK
HU, C
论文数:
0
引用数:
0
h-index:
0
HU, C
[J].
IEEE ELECTRON DEVICE LETTERS,
1984,
5
(12)
: 505
-
507
[4]
GATE DRAIN AVALANCHE BREAKDOWN IN GAAS POWER MESFETS
DAVID, JPR
论文数:
0
引用数:
0
h-index:
0
DAVID, JPR
SITCH, JE
论文数:
0
引用数:
0
h-index:
0
SITCH, JE
STERN, MS
论文数:
0
引用数:
0
h-index:
0
STERN, MS
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(10)
: 1548
-
1552
[5]
POWER-LIMITING BREAKDOWN EFFECTS IN GAAS-MESFET
FRENSLEY, WR
论文数:
0
引用数:
0
h-index:
0
FRENSLEY, WR
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(08)
: 962
-
970
[6]
BAND-STRUCTURE DEPENDENCE OF IMPACT IONIZATION BY HOT CARRIERS IN SEMICONDUCTORS - GAAS
PEARSALL, T
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
PEARSALL, T
CAPASSO, F
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
CAPASSO, F
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
NAHORY, RE
POLLACK, MA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
POLLACK, MA
CHELIKOWSKY, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
CHELIKOWSKY, JR
[J].
SOLID-STATE ELECTRONICS,
1978,
21
(01)
: 297
-
302
[7]
PINTO M, 1984, PISCES USERS MANUAL
←
1
→
共 7 条
[1]
DEPENDENCE OF MAXIMUM GATE DRAIN POTENTIAL IN GAAS-MESFETS UPON LOCALIZED SURFACE-CHARGE
BARTON, TM
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEW S WALES,JOINT MICROELECTR RES CTR,KENSINGTON,NSW 2033,AUSTRALIA
UNIV NEW S WALES,JOINT MICROELECTR RES CTR,KENSINGTON,NSW 2033,AUSTRALIA
BARTON, TM
LADBROOKE, PH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV NEW S WALES,JOINT MICROELECTR RES CTR,KENSINGTON,NSW 2033,AUSTRALIA
UNIV NEW S WALES,JOINT MICROELECTR RES CTR,KENSINGTON,NSW 2033,AUSTRALIA
LADBROOKE, PH
[J].
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(03)
: 117
-
119
[2]
DEPENDENCE OF CHANNEL ELECTRIC-FIELD ON DEVICE SCALING
CHAN, TY
论文数:
0
引用数:
0
h-index:
0
CHAN, TY
KO, PK
论文数:
0
引用数:
0
h-index:
0
KO, PK
HU, C
论文数:
0
引用数:
0
h-index:
0
HU, C
[J].
IEEE ELECTRON DEVICE LETTERS,
1985,
6
(10)
: 551
-
553
[3]
A SIMPLE METHOD TO CHARACTERIZE SUBSTRATE CURRENT IN MOSFETS
CHAN, TY
论文数:
0
引用数:
0
h-index:
0
CHAN, TY
KO, PK
论文数:
0
引用数:
0
h-index:
0
KO, PK
HU, C
论文数:
0
引用数:
0
h-index:
0
HU, C
[J].
IEEE ELECTRON DEVICE LETTERS,
1984,
5
(12)
: 505
-
507
[4]
GATE DRAIN AVALANCHE BREAKDOWN IN GAAS POWER MESFETS
DAVID, JPR
论文数:
0
引用数:
0
h-index:
0
DAVID, JPR
SITCH, JE
论文数:
0
引用数:
0
h-index:
0
SITCH, JE
STERN, MS
论文数:
0
引用数:
0
h-index:
0
STERN, MS
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1982,
29
(10)
: 1548
-
1552
[5]
POWER-LIMITING BREAKDOWN EFFECTS IN GAAS-MESFET
FRENSLEY, WR
论文数:
0
引用数:
0
h-index:
0
FRENSLEY, WR
[J].
IEEE TRANSACTIONS ON ELECTRON DEVICES,
1981,
28
(08)
: 962
-
970
[6]
BAND-STRUCTURE DEPENDENCE OF IMPACT IONIZATION BY HOT CARRIERS IN SEMICONDUCTORS - GAAS
PEARSALL, T
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
PEARSALL, T
CAPASSO, F
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
CAPASSO, F
NAHORY, RE
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
NAHORY, RE
POLLACK, MA
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
POLLACK, MA
CHELIKOWSKY, JR
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
CHELIKOWSKY, JR
[J].
SOLID-STATE ELECTRONICS,
1978,
21
(01)
: 297
-
302
[7]
PINTO M, 1984, PISCES USERS MANUAL
←
1
→