Charge pumping method for photosensor application by using amorphous indium-zinc oxide thin film transistors

被引：43

作者：

Liu, Po-Tsun ^{[1
,2
]}

Chou, Yi-Teh ^{[1
,3
]}

Teng, Li-Feng ^{[1
,3
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan

[2] Natl Chiao Tung Univ, Display Inst, Hsinchu 30010, Taiwan

[3] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 24期

关键词：

amorphous semiconductors; II-VI semiconductors; indium compounds; optical sensors; semiconductor thin films; thin film sensors; thin film transistors; wide band gap semiconductors; zinc compounds;

D O I：

10.1063/1.3155507

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The study investigated the photoreaction behavior of amorphous indium-zinc oxide thin film transistor (a-IZO TFT), which was thought to be insensitive to visible light. The obvious threshold voltage shift was observed after light illumination, and it exhibited slow recovery while returning to initial status. The photoreaction mechanism is well explained by the dynamic equilibrium of charge exchange reaction between O(2(g)) and O(2) in a-IZO layer. A charge pumping technique is used to confirm the mechanism and accelerate recoverability. Using knowledge of photoreaction behavior, an operation scheme of photosensing elements consist of a-IZO TFT is also demonstrated in this work.

引用

收藏

页数：3

相关论文

共 12 条

[1] High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer [J].

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Jeong, J ;

Keszler, DA .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :013503-1

[2] Transparent thin-film transistors with zinc indium oxide channel layer [J].

Dehuff, NL ;

Kettenring, ES ;

Hong, D ;

Chiang, HQ ;

Wager, JF ;

Hoffman, RL ;

Park, CH ;

Keszler, DA .

JOURNAL OF APPLIED PHYSICS, 2005, 97 (06)

[3] Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/Vs [J].

Fortunato, E. ;

Barquinha, P. ;

Pimentel, A. ;

Pereira, L. ;

Goncalves, G. ;

Martins, R. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2007, 1 (01) :R34-R36

[4] Amorphous ZnO transparent thin-film transistors fabricated by fully lithographic and etching processes [J].

Hsieh, Hsing-Hung ;

Wu, Chung-Chih .

APPLIED PHYSICS LETTERS, 2007, 91 (01)

[5] Amorphous gallium indium zinc oxide thin film transistors: Sensitive to oxygen molecules [J].

Kang, Donghun ;

Lim, Hyuck ;

Kim, Changjung ;

Song, Ihun ;

Park, Jaechoel ;

Park, Youngsoo ;

Chung, JaeGwan .

APPLIED PHYSICS LETTERS, 2007, 90 (19)

[6] EFFECT OF CHEMISORBED OXYGEN ON PHOTOVOLTAIC + PHOTOCONDUCTIVE PROCESSES IN RUTILE [J].

KEEZER, R .

JOURNAL OF APPLIED PHYSICS, 1964, 35 (06) :1866-&

[7] Transport in high mobility amorphous wide band gap indium zinc oxide films [J].

Martins, R ;

Barquinha, P ;

Pimentel, A ;

Pereira, L ;

Fortunato, E .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2005, 202 (09) :R95-R97

[8] Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J].

Nomura, K ;

Ohta, H ;

Takagi, A ;

Kamiya, T ;

Hirano, M ;

Hosono, H .

NATURE, 2004, 432 (7016) :488-492

[9] Influence of sputtering parameter on the optical and electrical properties of zinc-doped indium oxide thin films [J].

Pan, HC ;

Shiao, MH ;

Su, CY ;

Hsiao, CN .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2005, 23 (04) :1187-1191

[10] Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water [J].

Park, Jin-Seong ;

Jeong, Jae Kyeong ;

Chung, Hyun-Joong ;

Mo, Yeon-Gon ;

Kim, Hye Dong .

APPLIED PHYSICS LETTERS, 2008, 92 (07)