Towards single-electron metrology

被引:30
作者
Flensberg, K
Odintsov, AA
Liefrink, F
Teunissen, P
机构
[1] Danish Inst Fundamental Metrol, DK-2800 Lyngby, Denmark
[2] Nederlands Meetinst, NL-2600 AR Delft, Netherlands
[3] Delft Univ Technol, Dept Appl Phys, NL-2628 CJ Delft, Netherlands
[4] NMi Van Swinden Lab, NL-2600 AR Delft, Netherlands
来源
INTERNATIONAL JOURNAL OF MODERN PHYSICS B | 1999年 / 13卷 / 21-22期
关键词
D O I
10.1142/S0217979299002587
中图分类号
O59 [应用物理学];
学科分类号
摘要
We review the status of the understanding of single-electron transport (SET) devices with respect to their applicability in metrology. Their envisioned role as the basis of a high-precision electrical standard is outlined and is discussed in the context of other standards. The operation principles of single electron transistors, turnstiles and pumps are explained and the fundamental limits of these devices are discussed in detail. We describe the various physical mechanisms that influence the device uncertainty and review the analytical and numerical methods needed to calculate the intrinsic uncertainty and to optimise the fabrication and operation parameters. Recent experimental results are evaluated and compared with theoretical predictions. Although there are discrepancies between theory and experiments, the intrinsic uncertainty is already small enough to start preparing for the first SET-based metrological applications.
引用
收藏
页码:2651 / 2687
页数:37
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