Characterization of residual strain in SiC films deposited using 1,3-disilabutane for MEMS application

被引:22
作者
Gao, D [1 ]
Wijesundara, MBJ
Carraro, C
机构
[1] Univ Calif Berkeley, Dept Chem Engn, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA
[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA
[3] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley Sensor & Actuator Ctr, Berkeley, CA 94720 USA
[4] Univ Calif Berkeley, Dept Mech Engn, Berkeley, CA 94720 USA
[5] Univ Calif Berkeley, Berkeley Sensor & Actuator Ctr, Dept Chem Engn, Berkeley, CA 94720 USA
来源
JOURNAL OF MICROLITHOGRAPHY MICROFABRICATION AND MICROSYSTEMS | 2003年 / 2卷 / 04期
关键词
silicon carbide; MEMS; low-pressure chemical vapor deposition; single-source chemical vapor deposition; strain characterization;
D O I
10.1117/1.1610478
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 [电气工程]; 0809 [电子科学与技术];
摘要
The residual strain of amorphous and polycrystalline SiC films deposited using a single precursor 1,3-disilabutane is characterized as a function of deposition temperature ranging from 700 to 850degreesC. SiC microstrain gauges and cantilever beam arrays fabricated by micromachining are employed to characterize directly the average residual strain and strain gradient. The residual strain of SiC films changes from compressive to tensile as the deposition temperature increases. The strain gradient is also found to depend on the deposition temperature, and can be adjusted between positive and negative values to fabricate flat, curling-up, and curling-down micromechanical structures. (C) 2003 Society of PhotoOptical Instrumentation Engineers.
引用
收藏
页码:259 / 264
页数:6
相关论文
共 26 条
[1]
High vacuum chemical vapor deposition of cubic SiC thin films on Si(001) substrates using single source precursor [J].
Boo, JH ;
Lee, SB ;
Yu, KS ;
Sung, MM ;
Kim, Y .
SURFACE & COATINGS TECHNOLOGY, 2000, 131 (1-3) :147-152
[2]
Electrostatic actuators with intrinsic stress gradient - I. Materials and structures [J].
Chinthakindi, AK ;
Bhusari, D ;
Dusch, BP ;
Musolf, J ;
Willemsen, BA ;
Prophet, E ;
Roberson, M ;
Kohl, PA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2002, 149 (08) :H139-H145
[3]
CHUA CL, 2002, P SOL STAT SENS ACT, P372
[4]
FRANKE AE, 2000, P SOL STAT SENS ACT, P18
[5]
FRANKE AE, 2000, THESIS U CALIFORNIA
[6]
High-selectivity etching of polycrystalline 3C-SiC films using HBr-based transformer coupled plasma [J].
Gao, D ;
Howe, RT ;
Maboudian, R .
APPLIED PHYSICS LETTERS, 2003, 82 (11) :1742-1744
[7]
SINGLE-CRYSTALLINE, EPITAXIAL CUBIC SIC FILMS GROWN ON (100) SI AT 750-DEGREES-C BY CHEMICAL VAPOR-DEPOSITION [J].
GOLECKI, I ;
REIDINGER, F ;
MARTI, J .
APPLIED PHYSICS LETTERS, 1992, 60 (14) :1703-1705
[8]
A SIMPLE TECHNIQUE FOR THE DETERMINATION OF MECHANICAL STRAIN IN THIN-FILMS WITH APPLICATIONS TO POLYSILICON [J].
GUCKEL, H ;
RANDAZZO, T ;
BURNS, DW .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (05) :1671-1675
[9]
HUANG XMH, 2002, P SOL STAT SENS ACT, P368
[10]
STRESSES IN THIN POLYCRYSTALLINE SILICON FILMS [J].
KOLESHKO, VM ;
BELITSKY, VF ;
KIRYUSHIN, IV .
THIN SOLID FILMS, 1988, 162 (1-2) :365-374