Quantification of processing damage in porous low dielectric constant films

被引：54

作者：

Baklanov, Mikhail R.

Mogilnikov, Konstantin P.

Le, Quoc Toan

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

MICROELECTRONIC ENGINEERING | 2006年 / 83卷 / 11-12期

关键词：

low-k dielectrics; porosity; plasma damage; ellipsometric porosimetry;

D O I：

10.1016/j.mee.2006.10.019

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A method for evaluation of degree of hydrophilization of low-k films occurred as a result of technological processing damage is reported. The evaluation is based on analysis of adsorption isotherms of water vapors. It is shown that the degree of hydrophilization is a qualitative measure of plasma damage that correlates with the carbon depletion measured by TOF-SIMS. The presented method gives also a unique possibility to calculate water contact angle of internal surface of low-k films that cannot be measured by other methods. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：2287 / 2291

页数：5

共 12 条

[1] Determination of pore size distribution in thin films by ellipsometric porosimetry [J].