Identification and removal of trace organic contamination on silicon wafers stored in plastic boxes

被引:118
作者
Saga, K
Hattori, T
机构
[1] Sony-Corporation, ULSI Res. and Devmt. Laboratories
关键词
D O I
10.1149/1.1837198
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
As semiconductor device geometries continue to shrink, trace volatile organic contamination adsorbing on silicon surfaces has an increasingly detrimental impact on product performance and yield. Therefore, it becomes important to identify the origin of the organic contaminants and to eliminate them from the wafer. When wafers are stored in a plastic box in order to protect them from airborne contaminants, volatile organics from the polymeric construction material adsorb onto the wafter surfaces. A very small quantity of additives in the plastic material are apt to adsorb onto the wafers more easily than the unpolymerized monomers and oligomers outgassing in large quantities. As a result of the evaluation of various wet cleaning solutions in terms of their ability to remove these trace organic contaminants, dilute HF as well as ozonized ultrapure water has been found to completely remove these organic contaminants adsorbing on the silicon surfaces. After wet cleaning, organic contaminants adsorb more easily on the ozonized water-treated silicon surface than on the dilute HF-treated surface. Adsorption of the organic additives on the silicon surfaces can be inhibited by preventing the native oxide growth in a nitrogen atmosphere after dilute HF cleaning. Possible explanations for these phenomena are considered.
引用
收藏
页码:3279 / 3284
页数:6
相关论文
共 20 条
[1]  
Budde K. J., 1992, ELECTROCHEMICAL SOC, P271
[2]   APPLICATION OF ION MOBILITY SPECTROMETRY TO SEMICONDUCTOR TECHNOLOGY - OUTGASSINGS OF ADVANCED POLYMERS UNDER THERMAL-STRESS [J].
BUDDE, KJ ;
HOLZAPFEL, WJ ;
BEYER, MM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1995, 142 (03) :888-897
[3]  
Budde KJ, 1995, MATER RES SOC SYMP P, V386, P165, DOI 10.1557/PROC-386-165
[4]  
BUDDE KJ, 1990, ELECTROCHEMICAL SOC, P215
[5]  
BUDDE KJ, 1993, 39TH P ANN TECHN M I, P366
[6]  
Hatton T. J., 1994, EC ASPECTS INT MIGRA, P3
[7]   EFFECTS OF SURFACE HYDROGEN ON THE AIR OXIDATION AT ROOM-TEMPERATURE OF HF-TREATED SI(100) SURFACES [J].
HIRASHITA, N ;
KINOSHITA, M ;
AIKAWA, I ;
AJIOKA, T .
APPLIED PHYSICS LETTERS, 1990, 56 (05) :451-453
[8]   HYDROCARBON REACTION WITH HF-CLEANED SI(100) AND EFFECTS ON METAL-OXIDE-SEMICONDUCTOR DEVICE QUALITY [J].
KASI, SR ;
LIEHR, M ;
THIRY, PA ;
DALLAPORTA, H ;
OFFENBERG, M .
APPLIED PHYSICS LETTERS, 1991, 59 (01) :108-110
[9]  
Li L., 1994, Proceedings of the Second International Symposium on Ultra-Clean Processing of Silicon Surfaces (UCPSS '94), P163
[10]   EFFECT OF ORGANIC CONTAMINANTS ON THE OXIDATION-KINETICS OF SILICON AT ROOM-TEMPERATURE [J].
LICCIARDELLO, A ;
PUGLISI, O ;
PIGNATARO, S .
APPLIED PHYSICS LETTERS, 1986, 48 (01) :41-43