EFFECTS OF SURFACE HYDROGEN ON THE AIR OXIDATION AT ROOM-TEMPERATURE OF HF-TREATED SI(100) SURFACES

被引：112

作者：

HIRASHITA, N

KINOSHITA, M

AIKAWA, I

AJIOKA, T

机构：

[1] Oki Electric Industry Co., Ltd., VLSI Research and Development Laboratory, Higashi-asakawa, Hachioji

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 05期

关键词：

D O I：

10.1063/1.102762

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thermally stimulated desorption and x-ray photoelectron spectroscopy were used to study the air oxidation at room temperature of HF-treated Si(100) surfaces. The desorption results indicated an appreciable density of hydrogen at the surface. Air oxidation experiments with predesorbing surface hydrogen were carried out and an obtained linear relationship between the amount of H 2 desorption and oxidation indicated that the oxidation was allowed by H2 desorption. The surface hydrogen was also found to be stable in air at room temperature and to contribute to a retardation in air oxidation of the surface.

引用

页码：451 / 453

页数：3

共 11 条

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