Measurement of Einstein's A coefficient of the 296.7 nm transition line of the carbon atom

被引:8
作者
Ito, H
Ito, M
Hori, M
Kono, A
Takeo, T
Kato, T
Goto, T
机构
[1] NAGOYA UNIV, DEPT QUANTUM ENGN, CHIKUSA KU, NAGOYA, AICHI 464, JAPAN
[2] NAGOYA UNIV, CCRAST, CHIKUSA KU, NAGOYA, AICHI 464, JAPAN
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1997年 / 36卷 / 12A期
关键词
carbon atom; Einstein's A coefficient; ECR plasma; diamond film; etching;
D O I
10.1143/JJAP.36.L1616
中图分类号
O59 [应用物理学];
学科分类号
摘要
We measured Einstein's A coefficient of the transition line of the C atom at 296.7 nm (2s2p(3) S-5(2) - 2s(2)2p(2) P-3(2)), which is useful for the absorption spectroscopic measurement of C atom density in processing plasmas. Einstein's A coefficient was evaluated from the emission decay rate of the 296.7 nm line in an electron cyclotron plasma employing CO gas. The obtained value of 3.9x10(4) s(-1) is almost 2000 times as large as the reported theoretical A coefficient [G. H. Garstang: The Observatory 82 (1962) 50].
引用
收藏
页码:L1616 / L1618
页数:3
相关论文
共 12 条
[11]   MEASUREMENT OF ABSOLUTE DENSITIES OF SI, SIH AND SIH3 IN ELECTRON-CYCLOTRON-RESONANCE SIH4/H-2 PLASMA [J].
YAMAMOTO, Y ;
NOMURA, H ;
TANAKA, T ;
HIRAMATSU, M ;
HORI, M ;
GOTO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (7B) :4320-4324
[12]   Behavior of Si atoms in a silane electron cyclotron resonance plasma at high dissociations [J].
Yamamoto, Y ;
Hori, M ;
Goto, T ;
Hiramatsu, M .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (04) :1999-2003