Electron- and hole-doping effects on the electronic structure of manganite studied by X-ray absorption spectroscopy

被引:40
作者
Asokan, K [1 ]
Jan, JC
Rao, KVR
Chiou, JW
Tsai, HM
Mookerjee, S
Pong, WF
Tsai, MH
Kumar, R
Husain, S
Srivastava, JP
机构
[1] Tamkang Univ, Dept Phys, Tamsui 251, Taiwan
[2] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan
[3] Ctr Nucl Sci, New Delhi 110067, India
[4] Aligarh Muslim Univ, Dept Phys, Aligarh 202002, Uttar Pradesh, India
关键词
D O I
10.1088/0953-8984/16/21/027
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The electronic structures of hole-doped La0.7Ca0.3MnO3 and electron-doped La0.7Ce0.3MnO3 manganites are investigated by x-ray absorption near-edge structure spectroscopy at the O and Mn K-, and Mn L-3,L-2-edges. The Mn K- and L-3,L-2-edge results show that Ce dopants increase the occupation of the Mn 4p and majority-spin e(g) orbitals and reduce the positive effective charge of some Mn ions. However, Ce doping also induces holes in O 2p derived states. As for La0.7Ca0.3MnO3, in contrast to previous understanding that Ca doping converts some Mn ions into the Mn4+ state, we find that Ca dopants actually increase the number of majority-spin e(g) electrons. We find instead that the holes created by Ca dopants are in the O 2p derived states.
引用
收藏
页码:3791 / 3799
页数:9
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