New semiconductors TlInGaP and their gas source MBE growth

被引：14

作者：

Asahi, H ^{[1
]}

Fushida, M ^{[1
]}

Yamamoto, K ^{[1
]}

Iwata, K ^{[1
]}

Koh, H ^{[1
]}

Asami, K ^{[1
]}

Gonda, S ^{[1
]}

Oe, K ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, OPTOELECT LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷

关键词：

thallium alloy; TlInP; TlGaP; TlInGaP; infrared; mid-infrared; temperature-independent band gap; gas source MBE;

D O I：

10.1016/S0022-0248(96)00936-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

New III-V compound semiconductors TlxIn1-x-yGayP (thallium indium gallium phosphide), which we proposed recently for 0.9 mu m to over 10 mu m laser diodes, are grown by gas source molecular beam epitaxy on InP and GaAs substrates for the first time. They have a potential to exhibit a temperature-independent band-gap energy. Grown layers exhibit (2 x 4) surface reconstruction. X-ray diffraction measurements show the successful growth of TlInP, T/GaP and TlInGaP, although phase separation is observed in TlGaP grown on GaAs. Photoluminescence emission is observed for TlInP and TlInGaP grown on InP. Hall measurements show n-type conduction with a room temperature electron concentration of 6.3 x 10(15) cm(-3) and an electron mobility of 2500 cm(2)/V . s.

引用

页码：1195 / 1199

页数：5

共 6 条

[1] New III-V compound semiconductors TlInGaP for 0.9 mu m to over 10 mu m wavelength range laser diodes and their first successful growth [J].

Asahi, H ;

Yamamoto, K ;

Iwata, K ;

Gonda, S ;

Oe, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (7B) :L876-L879

[2] GAS SOURCE MOLECULAR-BEAM EPITAXY GROWTH OF SHORT-PERIOD GAP/ALP(001) SUPERLATTICES [J].

ASAHI, H ;

ASAMI, K ;

WATANABE, T ;

YU, SJ ;

KANEKO, T ;

EMURA, S ;

GONDA, S .

APPLIED PHYSICS LETTERS, 1991, 58 (13) :1407-1409

[3] INTLSB GROWTH BY OMVPE [J].

HUANG, KT ;

COHEN, RM ;

STRINGFELLOW, GB .

JOURNAL OF CRYSTAL GROWTH, 1995, 156 (04) :320-326

[4]

LONG D, 1968, ENERGY BANDS SEMICON

[5] INTIP - A PROPOSED INFRARED DETECTOR MATERIAL [J].

VANSCHILFGAARDE, M ;

CHEN, AB ;

KRISHNAMURTHY, S ;

SHER, A .

APPLIED PHYSICS LETTERS, 1994, 65 (21) :2714-2716

[6]

YAMAMOTO K, 1997, IN PRESS J APPL PHYS, V81

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