Photoluminescence investigation on impurity behavior in Sb-doped HgCdTe

Temperature-dependent (4.2-115 K) and excitation-intensity-dependent photoluminescence measurements have been performed on Sb doped HgCdTe samples with the emphasis on the impurity behavior of Sb doped in HgCdTe. In addition to the observation of the localized exciton, D degrees A degrees, band to band and bound to free transition related luminescence structures, the Sb-doping-related acceptor level of about 30 meV above the bottom of the valence band at 4.2 K has been obtained.