Ion implanted nanolayers in AlN for direct bonding with copper

被引：12

作者：

Piekoszewski, J ^{[1
]}

Olesinska, W

Jagielski, J

Kalinski, D

Chmielewski, M

Werner, Z

Barlak, M

Szymczyk, W

机构：

[1] Andrzej Soltan Inst Nucl Studies, PL-05400 Otwock, Poland

[2] IChTJ, PL-03145 Warsaw, Poland

[3] ITME, PL-01919 Warsaw, Poland

来源：

FUNCTIONAL NANOMATERIALS FOR OPTOELECTRONICS AND OTHER APPLICATIONS | 2004年 / 99-100卷

关键词：

direct bonding; aluminium nitride; nanolayers; ion implantation;

D O I：

10.4028/www.scientific.net/SSP.99-100.231

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

Experiments to directly bond AlN with Cu were conducted for different pre-treatments of the bonded components. AlN substrates were implanted either with oxygen, or titanium or iron ions at low (15 keV) or high (70 keV) energy, or thermally oxidized. Some Ti-implanted samples were also thermally oxidized. The copper component was annealed and thermally oxidized. The best results, with respect to the bond shear strength, were obtained for low-energy implantation of oxygen and titanium.

引用

页码：231 / 234

页数：4

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