Terahertz photoconductivity and plasmon modes in double-quantum-well field-effect transistors

被引：282

作者：

Peralta, XG ^{[1
]}

Allen, SJ

Wanke, MC

Harff, NE

Simmons, JA

Lilly, MP

Reno, JL

Burke, PJ

Eisenstein, JP

机构：

[1] Univ Calif Santa Barbara, Ctr Terahertz Sci & Technol, Santa Barbara, CA 93106 USA

[2] Sandia Natl Labs, Albuquerque, NM 87185 USA

[3] CALTECH, Dept Phys, Pasadena, CA 91125 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 09期

关键词：

D O I：

10.1063/1.1497433

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Double-quantum-well field-effect transistors with a grating gate exhibit a sharply resonant, voltage tuned terahertz photoconductivity. The voltage tuned resonance is determined by the plasma oscillations of the composite structure. The resonant photoconductivity requires a double-quantum well but the mechanism whereby plasma oscillations produce changes in device conductance is not understood. The phenomenon is potentially important for fast, tunable terahertz detectors. (C) 2002 American Institute of Physics.

引用

页码：1627 / 1629

页数：3

共 18 条

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