320Gbit/s WDM field experiment using 40Gbit/s ETDM channels over 176km dispersion-shifted fibre with nonlinearity-tolerant signal format

被引：17

作者：

Yonenaga, K

Miyamoto, Y

Hirano, A

Sano, A

Kuwahara, S

Kawakami, H

Toba, H

Murata, K

Fukutoku, M

Yamane, Y

Noguchi, K

Ishibashi, T

Nakajima, K

机构：

[1] NTT, Network Innovat Labs, Kanagawa 2390847, Japan

[2] NTT, Photon Labs, Kanagawa 2430198, Japan

[3] NTT, Access Network Serv Syst Labs, Naka, Ibaraki 3191193, Japan

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 02期

关键词：

D O I：

10.1049/el:20000054

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The first field demonstration of 320Gbit/s WDM transmission based on an electrically multiplexed 40Gbit/s channel with a word length of 2(23)-1 over a 176km dispersion-shifted fibre is presented. The high fibre input power of +10dBm/ch, which allows a large span loss, is achieved by using the carrier-suppressed return-to-zero signal format and L-band WDM amplification.

引用

页码：153 / 155

页数：3

共 12 条

[1]

[Anonymous], ULTR EL OPT OSA SPR

[2]

GARTHE D, 1997, OFC 97 DALL

[3]

HAGIMOTO K, 1997, OFC 97, P242

[4] First demonstration of 1580 nm wavelength band WDM transmission for doubling usable bandwidth and suppressing FWM in DSF [J].

Jinno, M ;

Sakamoto, T ;

Kani, J ;

Aisawa, S ;

Oda, K ;

Fukui, M ;

Ono, H ;

Oguchi, K .

ELECTRONICS LETTERS, 1997, 33 (10) :882-883

[5]

KUWANO S, 1996, OFC 96 SAN JOS

[6]

MIYAMOTO Y, 1999, OAA 99 NAR

[7]

NOGUCHI K, 1999, CLEO PAC RIM 99 SEOU, P1267

[8] 64Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs [J].

Otsuji, T ;

Yoneyama, M ;

Imai, Y ;

Enoki, T ;

Umeda, Y .

ELECTRONICS LETTERS, 1997, 33 (17) :1488-1489

[9] Flat-gain operation of 1580nm-band EDFA with gain variation of 0.2dB over 1579-1592nm [J].

Sakamoto, T ;

Hattori, K ;

Kani, J ;

Fukutoku, M ;

Fukui, M ;

Jinno, M ;

Oguchi, K .

ELECTRONICS LETTERS, 1998, 34 (20) :1959-1961

[10] Field experiments on 40Gbit/s repeaterless transmission over 198km dispersion-managed submarine cable using a monolithic mode-locked laser diode [J].

Sano, A ;

Kataoka, T ;

Tsuda, H ;

Hirano, A ;

Murata, K ;

Kawakami, H ;

Tada, Y ;

Hagimoto, K ;

Sato, K ;

Wakita, K ;

Kato, K ;

Miyamoto, Y .

ELECTRONICS LETTERS, 1996, 32 (13) :1218-1220

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