64Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs

被引:32
作者
Otsuji, T
Yoneyama, M
Imai, Y
Enoki, T
Umeda, Y
机构
[1] NTT, Syst Elect Labs, Kanagawa 24301, Japan
[2] NTT, Opt Network Syst Labs, Kanagawa 24301, Japan
关键词
high electron mobility transistors; multiplexing equipment; optical communication equipment;
D O I
10.1049/el:19970959
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 64Gbit/s 2:1 selector-type multiplexer IC using InAlAs/InGaAs/InP HEMTs is reported. The record operating data rate was measured on a wafer. The IC was mounted on a dedicated IC package and operated beyond 52 Gbit/s.
引用
收藏
页码:1488 / 1489
页数:2
相关论文
共 6 条
[1]  
Enoki T, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P193, DOI 10.1109/IEDM.1995.497212
[2]  
ENOKI T, 1995, INT C IND PHOSPH REL, P81
[3]   45Gbit/s AlGaAs/GaAs HEMT multiplexer IC [J].
Lao, Z ;
Nowotny, U ;
Thiede, A ;
Hurm, V ;
Kaufel, G ;
RiegerMotzer, M ;
Bronner, W ;
Seibel, J ;
Hulsmann, A .
ELECTRONICS LETTERS, 1997, 33 (07) :589-590
[4]   46Gbit/s multiplexer and 40Gbit/s demultiplexer IC modules using InAlAs/InGaAs/InP HEMTs [J].
Otsuji, T ;
Yoneyama, M ;
Imai, Y ;
Yamaguchi, S ;
Enoki, T ;
Umeda, Y ;
Sano, E .
ELECTRONICS LETTERS, 1996, 32 (07) :685-686
[5]  
REIN HM, 1997, ULTRAFAST ELECT OPTO, P118
[6]   CAPACITIVE FEEDBACK TECHNIQUE FOR WIDE-BAND AMPLIFIERS [J].
VADIPOUR, M .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1993, 28 (01) :90-92