45Gbit/s AlGaAs/GaAs HEMT multiplexer IC

被引：4

作者：

Lao, Z

Nowotny, U

Thiede, A

Hurm, V

Kaufel, G

RiegerMotzer, M

Bronner, W

Seibel, J

Hulsmann, A

机构：

[1] Fraunhofer-Inst. Appl. Solid-S., D-79108 Freiburg

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 07期

关键词：

high electron mobility transistors; multiplexing; integrated circuits;

D O I：

10.1049/el:19970364

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-speed time-division 2:1 multiplexer is presented. The IC is fabricated with the authors' standard 0.2 mu m gate-length enhancement and depletion A1GaAs/GaAs HEMT technology (f(T) = 60 and 55GHz). The circuit can operate up to 45Gbit/s using single-ended data and clock inputs. The differential output voltage is 1V(p-p). The power consumption is 500mW using a single supply voltage of -4.5V.

引用

页码：589 / 590

页数：2

共 5 条

[1]

FELDER A, 1995, IEEE S VLSI CIRC, P117

[2] E-BEAM DIRECT-WRITE IN A DRY-ETCHED RECESS GATE HEMT PROCESS FOR GAAS/ALGAAS CIRCUITS [J].