A IV 3.8-5.7 GHz differentially-tuned VCO in SOICMOS

被引：12

作者：

Fong, N ^{[1
]}

Plouchart, JO ^{[1
]}

Zamdmer, N ^{[1
]}

Liu, D ^{[1
]}

Wagner, L ^{[1
]}

Plett, C ^{[1
]}

Tarr, G ^{[1
]}

机构：

[1] Carleton Univ, Dept Elect, Ottawa, ON K1S 5B6, Canada

来源：

2002 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2002年

关键词：

D O I：

10.1109/RFIC.2002.1011514

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 1 V 3.8-5.7 GHz VCO was designed and fabricated in a 0.13 mum SOI CMOS process [1]. This VCO features differentially-tuned accumulation MOS varactors that (a) provides 40% frequency tuning when biased between 0 to I V, and (b) rejects common-mode noise such as flicker noise. At 1 MHz offset, the phase noise is -121.67 dBc/Hz at 3.8 GHz, and -111.67 dBc/Hz at 5.7 GHz. The power dissipation is between 2.3 to 2.7 mW depending on the centre frequency. When V-DD is reduced to 0.75 V, the VCO only dissipates 0.8 mW at 5.5 GHz.

引用

页码：75 / 78

页数：4

共 6 条

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