Interband light absorption at a rough interface

被引：3

作者：

Braginsky, L ^{[1
]}

机构：

[1] Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

PHYSICA E | 1999年 / 5卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

porous and microcrystalline semiconductors; quantum dots; optical properties;

D O I：

10.1016/S1386-9477(99)00256-8

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Light absorption at the boundary of indirect-band-gap, and direct-forbidden gap semiconductors is analyzed. It is found that the possibility of the electron momentum nonconservation at the interface leads to essential enhancement of absorption in porous and microcrystalline semiconductors. The effect is more pronounced at a rough boundary due to enlargement of the share of the interface atoms. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：142 / 152

页数：11

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