Carrier mobility and density contributions to photoconductivity transients in polycrystalline ZnO films

被引:218
作者
Studenikin, SA [1 ]
Golego, N [1 ]
Cocivera, M [1 ]
机构
[1] Univ Guelph, Guelph Waterloo Ctr Grad Work Chem, Guelph, ON N1G 2W1, Canada
关键词
D O I
10.1063/1.372194
中图分类号
O59 [应用物理学];
学科分类号
摘要
Slow photoconductivity transients were comprehensively studied in ZnO films prepared by spray pyrolysis of the zinc-nitrate solution. Surface charge controlled the film conductivity, and it was possible to reversibly change the conductivity by many orders of magnitude using short-term annealing in hydrogen and oxygen. Under illumination, the conductivity of as-grown films may increase by several orders of magnitude, depending on the dark conductivity. Photoconductivity was due to the capture of nonequilibrium holes at surface oxygen states to produce an equivalent number of excess electrons in the conduction band. Reverse process of the photoconductivity relaxation is determined by an electron tunneling mechanism to the surface oxygen states. (C) 2000 American Institute of Physics. [S0021-8979(00)05404-9].
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页码:2413 / 2421
页数:9
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