Temperature sensor using thermal transport properties in the subthreshold regime of an organic thin film transistor

被引：61

作者：

Jung, Soyoun ^{[1
]}

Ji, Taeksoo ^{[1
]}

Varadan, Vijay K. ^{[1
]}

机构：

[1] Univ Arkansas, Dept Elect Engn, Organ Elect & Devices Lab, Fayetteville, AR 72701 USA

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 06期

关键词：

D O I：

10.1063/1.2450646

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, a temperature sensor based on an organic thin film transistor is proposed and discussed in terms of its linearity and reliability of the variation in the subthreshold drain current with temperature. The saturation mobility exhibits thermally activated hopping and temperature-deactivated behavior in different temperature ranges, but the saturation current shows very little change compared to the subthreshold current that is linearly varied with temperature from 273 to 453 K. In addition, sensor reliability can be ensured by placing a time delay between consecutive measurements to release the charges trapped in the dielectric/semiconductor interface, the so-called bias-stress effect. (c) 2007 American Institute of Physics.

引用

页数：3

共 23 条

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