Analytical model for organic thin-film transistors operating in the subthreshold region -: art. no. 223506

被引:13
作者
Calvetti, E [1 ]
Savio, A [1 ]
Kovács-Vajna, ZM [1 ]
Colalongo, L [1 ]
机构
[1] Univ Brescia, Dept Elect DEA, I-25123 Brescia, Italy
关键词
D O I
10.1063/1.2138788
中图分类号
O59 [应用物理学];
学科分类号
摘要
In this letter, a mathematical model for the subthreshold current of organic thin-film transistors (OTFTs) is proposed. The model is based on the variable range hopping transport theory using the channel depletion approach as in the standard junction field-effect transistor theory. Furthermore, the model is generalized to account for the complete depletion of the organic film. It describes the OTFTs behavior in the whole subthreshold region and it is suitable for computer aided design applications. (c) 2005 American Institute of Physics.
引用
收藏
页码:1 / 3
页数:3
相关论文
共 11 条
  • [1] Field-effect transistors made from solution-processed organic semiconductors
    Brown, AR
    Jarrett, CP
    deLeeuw, DM
    Matters, M
    [J]. SYNTHETIC METALS, 1997, 88 (01) : 37 - 55
  • [2] Organic thin film transistors:: a DC/dynamic analytical model
    Calvetti, E
    Colalongo, L
    Kovács-Vajna, ZM
    [J]. SOLID-STATE ELECTRONICS, 2005, 49 (04) : 567 - 577
  • [3] Low-cost all-polymer integrated circuits
    Drury, CJ
    Mutsaers, CMJ
    Hart, CM
    Matters, M
    de Leeuw, DM
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (01) : 108 - 110
  • [4] Field-effect transistor made with a sexithiophene single crystal
    Horowitz, G
    Garnier, F
    Yassar, A
    Hajlaoui, R
    Kouki, F
    [J]. ADVANCED MATERIALS, 1996, 8 (01) : 52 - &
  • [5] Accumulation and depletion layer thicknesses in organic field effect transistors
    Kiguchi, M
    Nakayama, M
    Fujiwara, K
    Ueno, K
    Shimada, T
    Saiki, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2003, 42 (12A): : L1408 - L1410
  • [6] Organic field-effect transistors and all-polymer integrated circuits
    Matters, M
    de Leeuw, DM
    Vissenberg, MJCM
    Hart, CM
    Herwig, PT
    Geuns, T
    Mutsaers, CMJ
    Drury, CJ
    [J]. OPTICAL MATERIALS, 1999, 12 (2-3) : 189 - 197
  • [7] Dopant density determination in disordered organic field-effect transistors
    Meijer, EJ
    Detcheverry, C
    Baesjou, PJ
    van Veenendaal, E
    de Leeuw, DM
    Klapwijk, TM
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (08) : 4831 - 4835
  • [8] Muller R. S., 1986, DEVICE ELECT INTEGRA
  • [9] The influence of bulk traps on the subthreshold characteristics of an organic field effect transistor
    Scheinert, S
    Paasch, G
    Doll, T
    [J]. SYNTHETIC METALS, 2003, 139 (02) : 233 - 237
  • [10] AN ANALYTICAL MODEL FOR SHORT-CHANNEL ORGANIC THIN-FILM TRANSISTORS
    TORSI, L
    DODABALAPUR, A
    KATZ, HE
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 78 (02) : 1088 - 1093