Analytical model for organic thin-film transistors operating in the subthreshold region -: art. no. 223506

被引：13

作者：

Calvetti, E ^{[1
]}

Savio, A ^{[1
]}

Kovács-Vajna, ZM ^{[1
]}

Colalongo, L ^{[1
]}

机构：

[1] Univ Brescia, Dept Elect DEA, I-25123 Brescia, Italy

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 22期

关键词：

D O I：

10.1063/1.2138788

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, a mathematical model for the subthreshold current of organic thin-film transistors (OTFTs) is proposed. The model is based on the variable range hopping transport theory using the channel depletion approach as in the standard junction field-effect transistor theory. Furthermore, the model is generalized to account for the complete depletion of the organic film. It describes the OTFTs behavior in the whole subthreshold region and it is suitable for computer aided design applications. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 11 条

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