Organic thin film transistors:: a DC/dynamic analytical model

被引：57

作者：

Calvetti, E ^{[1
]}

Colalongo, L ^{[1
]}

Kovács-Vajna, ZM ^{[1
]}

机构：

[1] Univ Brescia, Dept Elect DEA, I-25123 Brescia, Italy

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 04期

关键词：

organic thin film transistors; analytical model; DC; time dependent; circuit simulation; variable range hopping;

D O I：

10.1016/j.sse.2005.01.006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a new DC/dynamic analytical model for organic thin-film transistors (OTFTs) is presented. The model is based on the variable range hopping theory, i.e. thermally activated tunneling of carriers between localized states. It accurately accounts for below-threshold, linear, and saturation operating conditions via a single formulation. Furthermore, the model does not require the explicit definition of the threshold and saturation voltages as input parameters, which are rather ambiguously defined, and it is suitable for CAD applications. (C) 2005 Elsevier Ltd. All rights reserved.

引用

页码：567 / 577

页数：11

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