Effects of intrinsic ZnO buffer layer based on P3HT/PCBM organic solar cells with Al-doped ZnO electrode

被引：77

作者：

Park, Sungeun ^{[1
]}

Tark, Sung Ju ^{[1
]}

Lee, Joon Sung ^{[1
]}

Lim, Heejin ^{[1
]}

Kim, Donghwan ^{[1
]}

机构：

[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136701, South Korea

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2009年 / 93卷 / 6-7期

关键词：

Organic solar cells; ZnO; Intrinsic ZnO; Shunt resistance;

D O I：

10.1016/j.solmat.2008.11.033

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Organic solar cell devices were fabricated using poly(3-hexylthiophene) (P3HT) and 6,6-phenyl C61-butyric acid methyl ester (PCBM), which play the role of an electron donor and acceptor, respectively. The transparent electrode of organic solar cells, indium tin oxide (ITO), was replaced by Al-doped ZnO (AZO). ZnO has been studied extensively in recent years on account of its high optical transmittance, electrical conduction and low material cost. This paper reports organic solar cells based on AI-doped ZnO as an alternative to ITO. Organic solar cells with intrinsic ZnO inserted between the P3HT/PCBM layer and AZO were also fabricated. The intrinsic ZnO layer prevented the shunt path in the device. The performance of the cells with a layer of intrinsic ZnO was superior to that without the intrinsic ZnO layer. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：1020 / 1023

页数：4

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