Fabrication of wide-gap Cu(ln1-xGax)Se2 thin film solar cells:: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness

被引：103

作者：

Ishizuka, S

Sakurai, K

Yamada, A

Matsubara, K

Fons, P

Iwata, K

Nakamura, S

Kimura, Y

Baba, T

Nakanishi, H

Kojima, T

Niki, S

机构：

[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan

[2] Tokyo Univ Sci, Noda, Chiba 2788510, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2005年 / 87卷 / 1-4期

关键词：

Cu(In; Ga)Se-2; ZnO; solar cells; i-ZnO layer thickness; wide-gap CIGS;

D O I：

10.1016/j.solmat.2004.08.017

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The correlation of the cell performance of wide-gap Cu(ln(1-x)Ga(x))Se-2 (CIGS) solar cells with the thickness of highly resistive i-ZnO layers, which are commonly introduced between the buffer layer and the transparent conductive oxide (TCO) layer in CIGS solar cell devices, was studied. It was found that cell parameters, in particular, the fill factor (F.F.) varied with the thickness of the i-ZnO layers and the variation of the F.F. was directly related to cell efficiency. A 16%-efficiency was achieved without use of an anti-reflection coating from wide-gap (Eg similar to 1.3 eV) CIGS solar cells by adjusting the deposition conditions of the i-ZnO layers. (c) 2004 Elsevier B.V. All rights reserved.

引用

页码：541 / 548

页数：8

共 12 条

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