Electromotive force and huge magnetoresistance in magnetic tunnel junctions

被引:140
作者
Hai, Pham Nam [1 ]
Ohya, Shinobu [1 ,2 ]
Tanaka, Masaaki [1 ,2 ]
Barnes, Stewart E. [3 ,4 ]
Maekawa, Sadamichi [5 ,6 ]
机构
[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Bunkyo Ku, Tokyo 1138656, Japan
[2] Japan Sci & Technol Agcy, Kawaguchi, Saitama 3320012, Japan
[3] Univ Miami, Dept Phys, Coral Gables, FL 33124 USA
[4] Univ Cambridge, Cavendish Lab, TCM, Cambridge CB3 0HE, England
[5] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
[6] Japan Sci & Technol Agcy, CREST, Tokyo 1000075, Japan
基金
英国工程与自然科学研究理事会;
关键词
ROOM-TEMPERATURE; FILMS; GAAS; MNAS;
D O I
10.1038/nature07879
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The electromotive force (e.m.f.) predicted by Faraday's law reflects the forces acting on the charge, -e, of an electron moving through a device or circuit, and is proportional to the time derivative of the magnetic field. This conventional e.m.f. is usually absent for stationary circuits and static magnetic fields. There are also forces that act on the spin of an electron; it has been recently predicted(1,2) that, for circuits that are in part composed of ferromagnetic materials, there arises an e.m.f. of spin origin even for a static magnetic field. This e.m.f. can be attributed to a time-varying magnetization of the host material, such as the motion of magnetic domains in a static magnetic field, and reflects the conversion of magnetic to electrical energy. Here we show that such an e.m.f. can indeed be induced by a static magnetic field in magnetic tunnel junctions containing zinc-blende-structured MnAs quantum nanomagnets. The observed e.m.f. operates on a timescale of approximately 10(2)-10(3) seconds and results from the conversion of the magnetic energy of the superparamagnetic MnAs nanomagnets into electrical energy when these magnets undergo magnetic quantum tunnelling. As a consequence, a huge magnetoresistance of up to 100,000 per cent is observed for certain bias voltages. Our results strongly support the contention that, in magnetic nanostructures, Faraday's law of induction must be generalized to account for forces of purely spin origin. The huge magnetoresistance and e.m.f. may find potential applications in high sensitivity magnetic sensors, as well as in new active devices such as 'spin batteries'.
引用
收藏
页码:489 / U2
页数:5
相关论文
共 21 条
[1]   GIANT MAGNETORESISTANCE OF (001)FE/(001) CR MAGNETIC SUPERLATTICES [J].
BAIBICH, MN ;
BROTO, JM ;
FERT, A ;
VANDAU, FN ;
PETROFF, F ;
EITENNE, P ;
CREUZET, G ;
FRIEDERICH, A ;
CHAZELAS, J .
PHYSICAL REVIEW LETTERS, 1988, 61 (21) :2472-2475
[2]   MESOSCOPIC QUANTUM TUNNELING OF THE MAGNETIZATION [J].
BARBARA, B ;
WERNSDORFER, W ;
SAMPAIO, LC ;
PARK, JG ;
PAULSEN, C ;
NOVAK, MA ;
FERRE, R ;
MAILLY, D ;
SESSOLI, R ;
CANESCHI, A ;
HASSELBACH, K ;
BENOIT, A ;
THOMAS, L .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1995, 140 :1825-1828
[3]   Magnetic memory and current amplification devices using moving domain walls [J].
Barnes, S. E. ;
Ieda, J. ;
Maekawa, S. .
APPLIED PHYSICS LETTERS, 2006, 89 (12)
[4]   Generalization of Faraday's law to include nonconservative spin forces [J].
Barnes, S. E. ;
Maekawa, S. .
PHYSICAL REVIEW LETTERS, 2007, 98 (24)
[5]   Spin motive forces, "measurements'', and spin-valves [J].
Barnes, S. E. .
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2007, 310 (02) :2035-2037
[6]  
BARNES SE, 2004, CURRENTS INDUCED DOM
[7]   ENHANCED MAGNETORESISTANCE IN LAYERED MAGNETIC-STRUCTURES WITH ANTIFERROMAGNETIC INTERLAYER EXCHANGE [J].
BINASCH, G ;
GRUNBERG, P ;
SAURENBACH, F ;
ZINN, W .
PHYSICAL REVIEW B, 1989, 39 (07) :4828-4830
[8]   OBSERVATION OF SINGLE-ELECTRON CHARGING EFFECTS IN SMALL TUNNEL-JUNCTIONS [J].
FULTON, TA ;
DOLAN, GJ .
PHYSICAL REVIEW LETTERS, 1987, 59 (01) :109-112
[9]   THOUSANDFOLD CHANGE IN RESISTIVITY IN MAGNETORESISTIVE LA-CA-MN-O FILMS [J].
JIN, S ;
TIEFEL, TH ;
MCCORMACK, M ;
FASTNACHT, RA ;
RAMESH, R ;
CHEN, LH .
SCIENCE, 1994, 264 (5157) :413-415
[10]   Structure and magnetism of MnAs nanocrystals embedded in GaAs as a function of post-growth annealing temperature [J].
Kwiatkowski, A. ;
Wasik, D. ;
Kaminska, M. ;
Bozek, R. ;
Szczytko, J. ;
Twardowski, A. ;
Borysiuk, J. ;
Sadowski, J. ;
Gosk, J. .
JOURNAL OF APPLIED PHYSICS, 2007, 101 (11)