Magnetic memory and current amplification devices using moving domain walls

被引:55
作者
Barnes, S. E. [1 ]
Ieda, J.
Maekawa, S.
机构
[1] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan
[2] Univ Miami, Dept Phys, Coral Gables, FL 33124 USA
[3] JST, CREST, Kawaguchi 3320012, Japan
关键词
D O I
10.1063/1.2354036
中图分类号
O59 [应用物理学];
学科分类号
摘要
A moving magnetic domain wall produces an electromotive force (emf). It is therefore possible to read the state of a magnetic memory device via the emf it produces when subjected to an interrogation pulse. It is also possible to amplify currents in pulse circuits, opening up the possibility of all magnetic logic circuits. (c) 2006 American Institute of Physics.
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页数:3
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