Interlayer charge transfer in bilayer quantum Hall states at various filling factors

被引：25

作者：

Muraki, K

Saku, T

Hirayama, Y

Kumada, N

Sawada, A

Ezawa, ZF

机构：

[1] NTT, Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

[2] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808578, Japan

来源：

SOLID STATE COMMUNICATIONS | 1999年 / 112卷 / 11期

关键词：

heterojunctions; quantum wells; electronic transport; quantum Hall effect; tunneling;

D O I：

10.1016/S0038-1098(99)00407-X

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied bilayer quantum Hall (QH) effects in double-quantum-well structures at various Landau-level (LL) filling factors nu. The stability of various QH states are examined by varying the density balance between the two layers. We observe a remarkable nu-dependent behavior; the interlayer charge transfer is allowed for particular values of nu, which then repeat in a characteristic sequence with a period of 4. We employ a pseudospin picture, by which the interlayer charge transfer is expressed as a rotation of the total pseudospin. The ability or inability to accommodate the charge transfer represents the degree of pseudospin polarization in the bilayer QH state. (C) 1999 Elsevier Science Ltd. All rights reserved.

引用

页码：625 / 629

页数：5

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